Qorvo's RFG1M20090 is optimized for commercial infrastructure, military communication and general purpose amplifier applications in the 1.8GHz to 2.2GHz frequency band, ideal for constant envelope, pulsed and WCDMA and LTE applications. Using an advanced 48V high power density Gallium Nitride (GaN) semiconductor process optimized for high peak to average ratio applications, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RFG1M20090 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain, efficiency, and linearizable performance in a single amplifier.