1. Thermal resistance determined to the back of a 20 mil Cu-Mo carrier plate with eutectic die attach (85 C)
2. Refer to the following document GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Qorvo's TGA2219-CP is a 3-stage, 25 W power amplifier operating over the 13.4 to 16.5 GHz band. Fabricated on Qorvo's production 0.15um GaN on SiC technology, this high performance amplifier offers > 30dB small-signal gain with 31% PAE, allowing the system designer to achieve superior performance levels in a cost efficient manner.
The TGA2219-CP is offered in a 10-lead 15 x 15 mm bolt-down package. Assembled with a pure-copper base, coupled with its high efficiency, the TGA2219-CP minimizes the strain on the system-level cooling requirements, further reducing system operating costs. Superior electrical performance and thermal management makes the TGA2219-CP ideal for supporting communications and radar applications in both commercial and military markets.
Both RF ports have integrated DC blocking capacitors and are fully matched to 50 ohms.
|Package Type||Cu Base|
|Package(mm)||15.2 x 15.2 x 3.5|
This product appears in the following application block diagrams: