TGF2023-2-05
DC - 18 GHz, 25 Watt Discrete Power GaN on SiC HEMT
Key Features
- Frequency range: DC to 18 GHz
- 43 dBm nominal Psat at 3 GHz
- 78.3% maximum PAE
- 18 dB nominal power gain
- Bias: VD = 12 to 32 V, IDQ = 100-500 mA
- Chip dimensions: 0.82 x 1.44 x 0.10 mm
Qorvo's TGF2023-2-05 is a discrete 5.0 mm GaN on SiC HEMT which operates from DC to 18 GHz.
The TGF2023-2-05 typically provides 43 dBm of saturated output power with power gain of 18 dB at 3 GHz. The maximum power added efficiency is 78.3% which makes the TGF2023-2-05 appropriate for high efficiency applications.
The product is lead-free and RoHS compliant.
Typical Applications
- Broadband Wireless
- Military
- Space
Product Categories
Application Categories
| Frequency Min(MHz) | DC |
| Frequency Max(MHz) | 18,000 |
| Gain(dB) | 18 |
| Psat(dBm) | 43 |
| PAE(%) | 78.3 |
| Vd(V) | 12 to 32 |
| Idq(mA) | 100 to 500 |
| Package Type | Die |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | 3A001.B.3.B.4 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.