Qorvo's TGF2023-2-05 is a discrete 5.0 mm GaN on SiC HEMT which operates from DC to 18 GHz.
The TGF2023-2-05 typically provides 43 dBm of saturated output power with power gain of 18 dB at 3 GHz. The maximum power added efficiency is 78.3% which makes the TGF2023-2-05 appropriate for high efficiency applications.
The product is lead-free and RoHS compliant.
|Vd(V)||12 to 32|
|Idq(mA)||100 to 500|
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.
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