The Qorvo TGF2819-FL is a greater-than 200 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics, military and civilian radar, and test instrumentation. The device can support pulsed and linear operations.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
|VD(V)||32 to 50|
This product appears in the following application block diagrams: