TGF2819-FL

    DC - 4 GHz, 200 Watt, 50 V GaN RF Power Transistor

    Key Features

    • Frequency range: DC - 4GHz
    • Output power (P3dB)1: 257 W
    • Linear gain1: 18 dB
    • Typical PAE3dB1: > 67.5 %
    • Operating voltage: 50V
    • CW and Pulse capable

    Note 1: @ 3 GHz Load Pull

    The Qorvo TGF2819-FL is a greater-than 200 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics, military and civilian radar, and test instrumentation. The device can support pulsed and linear operations.

    Lead-free and ROHS compliant.

    Evaluation boards are available upon request.

    Typical Applications

      • Military and Civilian Radar
      • Professional and Military Radio Communications
      • Test Instrumentation
      • Wideband and Narrowband Amplifiers
      • Jammers
    Frequency Min(MHz) DC
    Frequency Max(MHz) 4,000
    Gain(dB) > 14
    Psat(dBm) 53
    PAE(%) 58
    VD(V) 32 to 50
    Idq(mA) 250
    Package Type NI-360
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN 3A001.B.3.A.3

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Defense & Aerospace > Electronic Warfare > EW Signal Jammer

      EW Signal Jammer

    • Applications > Defense & Aerospace > Radar > S Band Radar

      S Band Radar

    • Applications > Defense & Aerospace > Radar > C Band Radar

      C Band Radar

    • Applications > Defense & Aerospace > Radar > L Band Radar

      L Band Radar

    • Applications > Network Infrastructure > Satellite Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT