4 - 6 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor

    Key Features

    • Frequency range: 4 - 6 GHz
    • Output power (P3dB): 6.8W at 5GHz
    • Linear gain: 12.7 dB typical at 5 GHz
    • Typical PAE3dB: 59.6% at 5 GHz
    • Operating voltage: 32V
    • Low thermal resistance package
    • CW and pulse capable
    • 3 x 3 mm package

    Qorvo's TGF3020-SM is a 5W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 4.0 to 6.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.

    The device is housed in an industry-standard 3 x 3 mm surface mount QFN package.

    Lead-free and ROHS compliant.

    Evaluation boards are available upon request.

    Typical Applications

      • 5.8 GHz ISM
      • C-Band Radar
      • Communication Systems
      • Telemetry
      • Test Instrumentation
      • Wideband Power Amplifiers
    Frequency Min(MHz) 4,000
    Frequency Max(MHz) 6,000
    Gain(dB) 12.7
    Psat(dBm) 38.3
    PAE(%) 59.6 @ 5GHz
    Vd(V) 32
    Idq(mA) 25
    Package Type QFN
    Package(mm) 3 x 3
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99

    Modelithics® Qorvo GaN Library

    A Modelithics non-linear model is available for this product.

    Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.

    Request a free Modelithics model

    Modelithics® Qorvo GaN Library Brochure

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