TGF3020-SM
4 - 6 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor
Key Features
- Frequency range: 4 - 6 GHz
- Output power (P3dB): 6.8W at 5GHz
- Linear gain: 12.7 dB typical at 5 GHz
- Typical PAE3dB: 59.6% at 5 GHz
- Operating voltage: 32V
- Low thermal resistance package
- CW and pulse capable
- 3 x 3 mm package
Qorvo's TGF3020-SM is a 5W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 4.0 to 6.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.
The device is housed in an industry-standard 3 x 3 mm surface mount QFN package.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
Typical Applications
- 5.8 GHz ISM
- C-Band Radar
- Communication Systems
- Telemetry
- Test Instrumentation
- Wideband Power Amplifiers