TGF4230-SCC
DC - 12 GHz, 1.2 mm HFET Die
Key Features
- Nominal Pout of 28.5 dBm at 8.5 GHz
- Nominal gain of 10.0 dB at 8.5 GHz
- Nominal PAE of 55 % at 8.5 GHz
- 1200 um HFET
- Bias at 8 V, 96 mA
- Dimensions: 0.61 x 0.74 x 0.1 mm (0.024 x 0.029 x 0.004 in)
Qorvo's TGF4230-SCC is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in Class A and Class AB operation.
Bond pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire bonding processes. The TGF4230-SCC is readily assembled using automatic equipment.
Typical Applications
- Cellular Base Stations
- High Dynamic Range LNAs
- Military
- Space
Application Categories
- Applications> Customer Premises Equipment
- Applications> Defense & Aerospace> Communications
- Applications> Defense & Aerospace> Electronic Warfare
- Applications> Defense & Aerospace> Radar
- Applications> Defense & Aerospace> Space
- Applications> Network Infrastructure> Point-to-Point Radio
- Applications> Network Infrastructure> Satellite Communications
| Frequency Min(MHz) | DC |
| Frequency Max(MHz) | 12,000 |
| Gain(dB) | 10 |
| Psat(dBm) | 28.5 |
| PAE(%) | 55 |
| Vd(V) | 8 |
| Idq(mA) | 96 |
| Package Type | Die |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |