TGM2635-CP

8 - 11 GHz, 100 Watt X Band GaN Power Amplifier Module

Key Features

  • Frequency range: 8 - 11 GHz
  • Pout: 50 dBm
  • PAE: 35 %
  • Small signal gain: >26 dB
  • Return loss: > 12dB
  • Bias: VD = 28 V (pulsed), IDQ = 1300 mA, VG = -2.6 V typical
  • Pulsed VD: PW = 100 us, DC = 10 %
  • Package dimensions: 19.05 x 19.05 x 4.52 mm

Qorvo's TGM2635-CP is a packaged X-band, high power MMIC amplifier fabricated on Qorvo's production 0.25um GaN on SiC process. The TGM2635–CP operates from 8 - 11 GHz and provides 100 W of saturated output power with 22.5 dB of large signal gain and greater than 35 % power-added efficiency.

The TGM2635-CP is packaged in a 10-lead 19.05 x 19.05 mm bolt-down package with a pure Cu base for superior thermal management. Both RF ports (RF input internally DC blocked) are matched to 50 ohms allowing for simple system integration.

The TGM26358-CP is ideally suited for both military and commercial X band radar systems and data links.

Lead-free and RoHS compliant.

Evaluation boards are available upon request.

For additional information on GaN thermal performance refer to the following application note and video.

Typical Applications

    • Data Link
    • X Band Radar
    • Repeaters / Boosters / DAS
    • EW Signal Jammer