TGM2635-CP
8 - 11 GHz, 100 Watt X Band GaN Power Amplifier Module
Key Features
- Frequency range: 8 - 11 GHz
- Pout: 50 dBm
- PAE: 35 %
- Small signal gain: >26 dB
- Return loss: > 12dB
- Bias: VD = 28 V (pulsed), IDQ = 1300 mA, VG = -2.6 V typical
- Pulsed VD: PW = 100 us, DC = 10 %
- Package dimensions: 19.05 x 19.05 x 4.52 mm
Qorvo's TGM2635-CP is a packaged X-band, high power MMIC amplifier fabricated on Qorvo's production 0.25um GaN on SiC process. The TGM2635–CP operates from 8 - 11 GHz and provides 100 W of saturated output power with 22.5 dB of large signal gain and greater than 35 % power-added efficiency.
The TGM2635-CP is packaged in a 10-lead 19.05 x 19.05 mm bolt-down package with a pure Cu base for superior thermal management. Both RF ports (RF input internally DC blocked) are matched to 50 ohms allowing for simple system integration.
The TGM26358-CP is ideally suited for both military and commercial X band radar systems and data links.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
For additional information on GaN thermal performance refer to the following application note and video.
Typical Applications
- Data Link
- X Band Radar
- Repeaters / Boosters / DAS
- EW Signal Jammer