Qorvo's UF3C120040K3S 1200 V, 35 mohm RDS(on) cascode SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are available in a TO-247-3L package and are excellent for switching inductive loads, and any application requiring standard gate drive.
|RDS(on) Typ @ 25C(mohm)||35|
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