650 V, 34 mohm SiC FET

    Discontinued >

    Possible replacement: UF3SC065030B7S

    Key Features

    • On-resistance (RDS(on)): 34 mohm (typ)
    • Maximum operating temperature: 150 °C
    • Excellent reverse recovery
    • Low gate charge
    • Low intrinsic capacitance
    • ESD protected, HBM class 2

    Qorvo's UF3SC065030D8S 650 V, 34 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the DFN8X8-4L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.

    Typical Applications

      • EV Charging
      • PV Inverters
      • Switched-Mode Power Supplies
      • Power Factor Correction Modules
      • Motor Drives
      • Induction Heating
    VDS Max(V) 650
    RDS(on) Typ @ 25C(mohm) 34
    ID Max(A) 18
    Generation Gen 3
    Tj Max(°C) 175
    Automotive Qualification No
    Package Type DFN8x8
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99