Mouser | 1029 | Buy Online > | |
RELL | 1688 | Buy Online > | |
RFMW | 200 | Buy Online > |
Qorvo's UJ3C120080K3S 1200 V, 80 mohm RDS(on) SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. Available in the TO-247-3L package, these devices are excellent for switching inductive loads, and any application requiring standard gate drive.
VDS Max(V) | 1,200 |
RDS(on) Typ @ 25C(mohm) | 80 |
ID Max(A) | 33 |
Generation | Gen 3 |
Tj Max(°C) | 175 |
Automotive Qualification | Yes |
Package Type | TO-247-3L |
RoHS | Yes |
Lead Free | Yes |
Halogen Free | Yes |
ITAR Restricted | No |
ECCN | EAR99 |