1200 V, 80 mohm SiC FET

    Key Features

    • On-resistance RDS(on): 80 mohm (typ)
    • Maximum operating temperature: 175 °C
    • Excellent reverse recovery
    • Low gate charge
    • Low intrinsic capacitance
    • ESD protected, HBM class 2

    Qorvo's UJ3C120080K3S 1200 V, 80 mohm RDS(on) SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. Available in the TO-247-3L package, these devices are excellent for switching inductive loads, and any application requiring standard gate drive.

    Typical Applications

      • EV Charging
      • PV Inverters
      • Switched-Mode Power Supplies
      • Power Factor Correction Modules
      • Motor Drives
      • Induction Heating
    VDS Max(V) 1,200
    RDS(on) Typ @ 25C(mohm) 80
    ID Max(A) 33
    Generation Gen 3
    Tj Max(°C) 175
    Automotive Qualification Yes
    Package Type TO-247-3L
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99