QPD1014
15 Watt, 50 Volt, 0.03 - 1.2 GHz, GaN RF Input-Matched Transistor
Key Features
- Frequency Range: 0.03 - 1.2 GHz
- Output Power (P3dB): 12.5 W at 1 GHz
- Linear Gain: 18.4 dB typical at 1 GHz
- Typical PAE3dB: 69.5% at 1 GHz
- Operating Voltage: 50V
- Low Thermal Resistance Package
- CW and Pulse Capable
- 6 x 5 mm Package
| Mouser | 33 | Buy Online > | |
| RELL | 236 | Buy Online > | |
| RFMW | 63 | Buy Online > |
The QPD1014 is a 15W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 1200MHz on a 50V supply rail. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
Typical Applications
- Military radar
- Commercial radar
- Land mobile and military radio communications
- Active Antenna
- Basestation
- Jammers
Product Categories
Application Categories
| Frequency Min(MHz) | 30 |
| Frequency Max(MHz) | 1,200 |
| Gain(dB) | 18.4 |
| Psat(dBm) | 41 |
| PAE(%) | 69.5 |
| Vd(V) | 50 |
| Idq(mA) | 25 |
| Package Type | DFN |
| Package(mm) | 6.0 x 5.0 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.