FP2189-G
0.05 - 4 GHz, 1 Watt GaAs HFET
Use CLY5 for new designs
Key Features
- 50 to 4000 MHz
- +30 dBm P1dB
- +43 dBm Output IP3
- High drain efficiency
- 18.5 dB gain @ 900 MHz
- Lead-free / green / RoHS compliant
- SOT-89 package
- MTTF > 100 Years
Qorvo's FP2189-G is a high performance 1 Watt HFET (Heterostructure FET) in a low-cost SOT-89 surface mount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1-dB compression, while providing 18.5 dB gain at 900 MHz.
The device conforms to Qorvo's long history of producing high reliability and quality components. The FP2189-G has an associated MTTF of greater than 100 years at a mounting temperature of 85 °C and is available in both the standard SOT-89 package and the environmentally-friendly lead-free / green / RoHS-compliant SOT-89 package. All devices are 100% RF and DC tested.
The product is targeted for use as driver amplifiers for wireless infrastructure where high performance and high efficiency are required.
Typical Applications
- CATV / DBS
- Defense / Homeland Security
- Fixed Wireless
- Industrial, Scientific and Medical (ISM)
- Mobile Infrastructure
| Frequency Min(MHz) | 50 |
| Frequency Max(MHz) | 4,000 |
| Gain(dB) | 18 |
| OP1dB(dBm) | 30 |
| NF(dB) | 4.5 |
| Vd(V) | 8 |
| Idq(mA) | 250 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |