FP2189-G
0.05 - 4 GHz, 1 Watt GaAs HFET
Qorvo's FP2189-G is a high performance 1 Watt HFET (Heterostructure FET) in a low-cost SOT-89 surface mount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1-dB compression, while providing 18.5 dB gain at 900 MHz.
The device conforms to Qorvo's long history of producing high reliability and quality components. The FP2189-G has an associated MTTF of greater than 100 years at a mounting temperature of 85 °C and is available in both the standard SOT-89 package and the environmentally-friendly lead-free / green / RoHS-compliant SOT-89 package. All devices are 100% RF and DC tested.
The product is targeted for use as driver amplifiers for wireless infrastructure where high performance and high efficiency are required.
Key Features
- 50 to 4000 MHz
- +30 dBm P1dB
- +43 dBm Output IP3
- High drain efficiency
- 18.5 dB gain @ 900 MHz
- Lead-free / green / RoHS compliant
- SOT-89 package
- MTTF > 100 Years
Typical Applications
- CATV / DBS
- Defense / Homeland Security
- Fixed Wireless
- Industrial, Scientific and Medical (ISM)
- Mobile Infrastructure
Parameters
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