FP31QF-F
0.05 - 4 GHz, 2 Watt GaAs HFET
Discontinued >
Use TQP7M9104 for new designs.
Key Features
- 50 to 4000 MHz
- 18 dB gain @ 900 MHz
- +34 dBm P1dB
- +46 dBm Output IP3
- High drain efficiency
- Single voltage supply
- Robust 1000V ESD, Class IC
- Lead free / green / RoHS compliant
- 6 mm 28-pin QFN package
Qorvo's FP31QF-F is a high performance 2 Watt HFET (Heterostructure FET) in a low-cost lead-free / RoHS-compliant 28-pin 6x6 mm QFN (Quad Flatpack, No-Lead) surface-mount package. This device works optimally at a drain bias of +9 V and 450 mA to achieve +46 dBm output IP3 performance and an output power of +34 dBm at 1 dB compression.
The device conforms to Qorvo's long history of producing high reliability and quality components. The FP31QF-F has an associated MTTF of a minimum of 100 years at a mounting temperature of 85°C. All devices are 100% RF and DC tested.
The product is targeted for use as driver amplifiers for wireless infrastructure where high performance and high efficiency are required.
Typical Applications
- CATV / DBS
- Defense / Homeland Security
- Fixed Wireless
- Industrial, Scientific and Medical (ISM)
- Mobile Infrastructure
- RFID
- Wireless LAN (WLAN)
| Frequency Min(MHz) | 50 |
| Frequency Max(MHz) | 4,000 |
| Gain(dB) | 18 |
| OP1dB(dBm) | 34 |
| NF(dB) | 3.5 |
| Vd(V) | 9 |
| Idq(mA) | 450 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |