QPA1009D

    10.7 - 12.7 GHz 17.5 Watt GaN Amplifier

    Key Features

    • Frequency Range: 10.7 - 12.7 GHz
    • PSAT (PIN=27 dBm): > 43.5 dBm
    • PAE (PIN=27 dBm): > 40 %
    • Power Gain (PIN=27 dBm): > 17 dB
    • Small Signal Gain: > 22 dB
    • Bias: VD = 20 V, IDQ = 600 mA
    • Die Dimensions: 3.16 x 4.24 x 0.10 mm

     

    Qorvo's QPA1009D is a wide band power amplifier MMIC fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 10.7 – 12.7 GHz, the QPA1009D provides > 17.5 Watts of saturated output power and 17 dB of large-signal gain while achieving > 40% power-added efficiency.

    The QPA1009D RF input port is DC coupled to ground for optimum ESD performance. The QPA1009D RF ports have DC blocking capacitors and are matched to 50 ohms.

    The QPA1009D can support a wide range of operating conditions, including CW operation, making it well-suited for both commercial and military systems.

    Lead-free and RoHS compliant.

    For additional information on GaN thermal performance refer to the following application note and video.

    Typical Applications

      • Satellite Communications
      • Radar
      • Point to Point Communications
    Frequency Min(GHz) 10.7
    Frequency Max(GHz) 12.7
    Psat(dBm) 43.5
    Gain(dB) 17
    PAE(%) 40
    Voltage(V) 20
    Current(mA) 600
    Package Type Die
    Package(mm) 3.16 x 4.24 x 0.10
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN 3A001.B.2.B.2

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Communications > Military Radio

      Military Radio

    • Applications > Defense & Aerospace > Electronic Warfare > EW Signal Jammer

      EW Signal Jammer

    • Applications > Defense & Aerospace > Radar > X Band Radar

      X Band Radar