QPA1019D

    4.5 – 7.0 GHz 10 Watt GaN Power Amplifier

    Key Features

    • Frequency Range: 4.5 – 7.0 GHz
    • PSAT (PIN=22 dBm): > 40 dBm
    • PAE (PIN=22 dBm): > 39 %
    • Power Gain (PIN=22 dBm): > 19 dB
    • Bias: VD = 22 V, IDQ = 290 mA, VG = −2.5 V typical
    • Chip Dimensions: 2.835 x 1.590 x 0.100 mm

    Qorvo's QPA1019D is a high-power, C-band amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 4.5 – 7.0 GHz, the QPA1019D provides greater than 10 W of saturated output power and 19 dB of large-signal gain while achieving greater than 39% power-added efficiency.

    The QPA1019D can also support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages.

    The QPA1019D MMIC has DC blocking capacitors on both RF ports, which are matched to 50 ohms. The QPA1019D is ideal for radar and satellite communication systems.

    Lead-free and RoHS compliant.

    Evaluation board available on request.

     

    Typical Applications

      • C-Band Radar
      • Satellite Communication
    Frequency Min(GHz) 4.5
    Frequency Max(GHz) 7
    Psat(dBm) 40
    Gain(dB) 33.5
    PAE(%) 40
    Voltage(V) 22
    Current(mA) 290
    Package Type Die
    Package(mm) 2.835 x 1.590 x 0.100
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No