QPA3069
2.7 - 3.5 GHz, 100 Watt GaN Power Amplifier
Key Features
- Frequency Range: 2.7 - 3.5 GHz
- PSAT (PIN=25 dBm): > 50 dBm
- PAE (PIN=25 dBm): > 53 %
- Power Gain (PIN=25 dBm): > 25 dB
- Bias: VD = 30 V, IDQ = 300 mA, PIN = 25 dBm
- Package Dimensions: 7.00 x 7.00 x 0.85 mm
Qorvo's QPA3069 is a packaged, high-power S-band amplifier fabricated on Qorvo's production 0.25 um GaN on SiC process (QGaN25). Covering 2.7 - 3.5 GHz, the QPA3069 provides 50 dBm of saturated output power and 25 dB of large-signal gain while achieving 53% power-added efficiency.
The QPA3069 is packaged in a 7 mm x 7 mm 48-pin plastic overmolded package. It can support a variety of operating conditions to best support system requirements.
With good thermal properties, it can support a range of bias voltages.
The QPA3069 MMIC has DC blocking capacitors on both RF ports, which are matched to 50 ohms. The QPA3069 is ideal for military radar systems.
Lead-free and RoHS compliant.
For additional information on GaN thermal performance refer to the following application note and video.
Typical Applications
- Electronic Warfare
- Radar
Product Categories
Application Categories
| Frequency Min(GHz) | 2.7 |
| Frequency Max(GHz) | 3.5 |
| Psat(dBm) | 50 |
| Gain(dB) | 25 |
| PAE(%) | 53 |
| Voltage(V) | 30 |
| Current(mA) | 300 |
| Package Type | overmold |
| Package(mm) | 7.00 x 7.00 x 0.85 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | 3A001.B.2.A.3 |