QPA3069

    2.7 - 3.5 GHz 100 Watt GaN Power Amplifier

    Key Features

    • Frequency Range: 2.7 - 3.5 GHz
    • PSAT (PIN=25 dBm): > 50 dBm
    • PAE (PIN=25 dBm): > 53 %
    • Power Gain (PIN=25 dBm): > 25 dB
    • Bias: VD = 30 V, IDQ = 300 mA, PIN = 25 dBm
    • Package Dimensions: 7.00 x 7.00 x 0.85 mm

     

    Qorvo's QPA3069 is a packaged, high-power S-band amplifier fabricated on Qorvo's production 0.25 um GaN on SiC process (QGaN25). Covering 2.7 - 3.5 GHz, the QPA3069 provides 50 dBm of saturated output power and 25 dB of large-signal gain while achieving 53% poweradded efficiency.

    The QPA3069 is packaged in a 7 mm x 7 mm 48-pin plastic overmolded package. It can support a variety of operating conditions to best support system requirements.
    With good thermal properties, it can support a range of bias voltages.

    The QPA3069 MMIC has DC blocking capacitors on both RF ports, which are matched to 50 ohms. The QPA3069 is ideal for military radar systems.

    Lead-free and RoHS compliant.

    For additional information on GaN thermal performance refer to the following application note and video.

    Typical Applications

      • Electronic Warfare
      • Radar
    Frequency Min(GHz) 2.7
    Frequency Max(GHz) 3.5
    Psat(dBm) 50
    Gain(dB) 25
    PAE(%) 53
    Voltage(V) 30
    Current(mA) 300
    Package Type overmold
    Package(mm) 7.00 x 7.00 x 0.85
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN 3A001.B.2.A.3

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Radar > S Band Radar

      S Band Radar