Data sheet available upon request.
The QPD0009 is a dual-path discrete GaN on SiC HEMT in DFN package which operates from 3.4 to 3.6 GHz. The device is a single-stage power amplifier transistor for
Doherty application. QPD0009 can deliver PAVG of 7.6 W at +48 V operation.
Lead-free and RoHS compliant.
|Package(mm)||7.0 x 6.5|