Data sheet available upon request.
End of Life announced August 3, 2023 (PCN 23-0105).
Last Time Buy: February 17, 2024
Recommended replacement for new designs: QPB3810
Contact your local sales representative for assistance.
The QPD0010 is an asymmetric dual-path discrete GaN on SiC HEMT in a DFN package which operates from 2.5 to 2.7 GHz. In each path is a single-stage amplifier transistor. QPD0010 can deliver an average power of 15 W in a Doherty configuration.
Lead free and RoHS compliant.
| Frequency Min(MHz) | 2,500 |
| Frequency Max(MHz) | 2,700 |
| Gain(dB) | 15 |
| Psat(dBm) | 50.5 |
| Drain Efficiency(%) | 55 |
| Vd(V) | 48 |
| Idq(mA) | 65 |
| Package Type | DFN |
| Package(mm) | 7.0 x 6.5 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |