Data sheet available upon request.
The QPD0010 is an asymmetric dual-path discrete GaN on SiC HEMT in a DFN package which operates from 2.5 to 2.7 GHz. In each path is a single-stage amplifier transistor. QPD0010 can deliver an average power of 15 W in a Doherty configuration.
Lead free and RoHS compliant.
|Package(mm)||7.0 x 6.5|