QPD0010

    2.5 - 2.7 GHz, 40 Watt / 80 Watt, 48 Volt Asymmetric Doherty

    Key Features

    • Operating Frequency Range: 2.5 - 2.7 GHz
    • Operating Drain Voltage: +48 V
    • Maximum Doherty Peak Power at 3.5 GHz: 112 W
    • Maximum Doherty Drain Efficiency at 3.5 GHz: 55%
    • Maximum Doherty Gain at 3.5 GHz: 15 dB
    • 7.0 x 6.5 mm DFN Package

    The QPD0010 is an asymmetric dual-path discrete GaN on SiC HEMT in a DFN package which operates from 2.5 to 2.7 GHz. In each path is a single-stage amplifier transistor. QPD0010 can deliver an average power of 15 W in a Doherty configuration.

    Lead free and RoHS compliant.

    Typical Applications

      • WCDMA / LTE
      • Macrocell Base Station
      • Microcell Base Station
      • Small Cell
      • Active Antenna
      • 5G Massive MIMO
      • Asymmetric Doherty Applications
    Frequency Min(MHz) 2,500
    Frequency Max(MHz) 2,700
    Gain(dB) 15
    Psat(dBm) 50.5
    Drain Efficiency(%) 55
    Vd(V) 48
    Idq(mA) 65
    Package Type DFN
    Package(mm) 7.0 x 6.5
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99