QPD0305

    3.4 - 3.8 GHz, 2 x 20 Watt, 48 Volt Dual GaN RF Transistor

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    Data sheet available upon request.
    Contact your local sales representative for assistance.

    Key Features

    • Operating Frequency Range: 3.4 - 3.8 GHz
    • Operating Drain Voltage: +48 V
    • Maximum Output Power (PSAT) at 3.6 GHz: 22.5 W Each Path
    • Maximum Drain Efficiency at 3.6 GHz: 75.9% Each Path
    • Efficiency-Tuned P3dB Gain at 3.6 GHz: 20.0 dB Each Path

    The QPD0305 is a dual-path discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 3.4 to 3.8 GHz. In each path is a single-stage amplifier transistor.

    QPD0305 can deliver PSAT of 22.5 W at +48 V operation through each path.

    Lead free and RoHS compliant.

    Typical Applications

      • W-CDMA / LTE
      • Macrocell Base Station Driver
      • Microcell Base Station
      • Small Cell
      • Active Antenna
      • 5G Massive MIMO
      • Symmetric Doherty Applications
    Frequency Min(MHz) 3,400
    Frequency Max(MHz) 3,800
    Gain(dB) 20
    Psat(dBm) 43.5
    Drain Efficiency(%) 75.9
    Vd(V) 48
    Idq(mA) 32.5
    Package Type DFN
    Package(mm) 7.0 x 6.5
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN 5A991G

    This product appears in the following application block diagrams:

    • Applications > Network Infrastructure > Wireless Infrastructure > 5G > 5G Sub-6 GHz Massive MIMO

      5G Sub-6 GHz Massive MIMO