QPD0305

3.4 - 3.8 GHz, 2 x 20 Watt, 48 Volt Dual GaN RF Transistor

The QPD0305 is a dual-path discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 3.4 to 3.8 GHz. In each path is a single-stage amplifier transistor.

QPD0305 can deliver PSAT of 22.5 W at +48 V operation through each path.

Lead free and RoHS compliant.

Discontinued
i
Data sheet available upon request.

End of Life announced March 24, 2022 (PCN 22-0042).
Last Time Buy: September 30, 2022
Recommended replacement for new designs: QPD0009J
Contact your local sales representative for assistance.
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Key Features

  • Operating Frequency Range: 3.4 - 3.8 GHz
  • Operating Drain Voltage: +48 V
  • Maximum Output Power (PSAT) at 3.6 GHz: 22.5 W Each Path
  • Maximum Drain Efficiency at 3.6 GHz: 75.9% Each Path
  • Efficiency-Tuned P3dB Gain at 3.6 GHz: 20.0 dB Each Path

Typical Applications

  • W-CDMA / LTE
  • Macrocell Base Station Driver
  • Microcell Base Station
  • Small Cell
  • Active Antenna
  • 5G Massive MIMO
  • Symmetric Doherty Applications

Parameters

Frequency Min (MHz)
3,400
Frequency Max (MHz)
3,800
Gain (dB)
20
Psat (dBm)
43.5
Vd (V)
48
Package Type
DFN
Package Size (mm)
7.0 x 6.5
RoHS
Yes
Lead Free
Yes
Halogen Free
Yes
ITAR Restricted
No
ECCN
5A991G

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