QPD0305
3.4 - 3.8 GHz, 2 x 20 Watt, 48 Volt Dual GaN RF Transistor
Discontinued >
Data sheet available upon request.
End of Life announced March 24, 2022 (PCN 22-0042).
Last Time Buy: September 30, 2022
Recommended replacement for new designs: QPD0009J
Contact your local sales representative for assistance.
Key Features
- Operating Frequency Range: 3.4 - 3.8 GHz
- Operating Drain Voltage: +48 V
- Maximum Output Power (PSAT) at 3.6 GHz: 22.5 W Each Path
- Maximum Drain Efficiency at 3.6 GHz: 75.9% Each Path
- Efficiency-Tuned P3dB Gain at 3.6 GHz: 20.0 dB Each Path
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The QPD0305 is a dual-path discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 3.4 to 3.8 GHz. In each path is a single-stage amplifier transistor.
QPD0305 can deliver PSAT of 22.5 W at +48 V operation through each path.
Lead free and RoHS compliant.
Typical Applications
- W-CDMA / LTE
- Macrocell Base Station Driver
- Microcell Base Station
- Small Cell
- Active Antenna
- 5G Massive MIMO
- Symmetric Doherty Applications
Product Categories
| Frequency Min(MHz) | 3,400 |
| Frequency Max(MHz) | 3,800 |
| Gain(dB) | 20 |
| Psat(dBm) | 43.5 |
| Drain Efficiency(%) | 75.9 |
| Vd(V) | 48 |
| Idq(mA) | 32.5 |
| Package Type | DFN |
| Package(mm) | 7.0 x 6.5 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | 5A991G |