QPD0405

    4.4 - 5.0 GHz, 2 x 20 Watt, 48 Volt Dual GaN RF Transistor

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    Data sheet available upon request.
    Contact your local sales representative for assistance.

    Key Features

    • Operating Frequency Range: 4400 - 5000 MHz
    • Operating Drain Voltage: +48 V
    • Output Power (PSAT): 22 W
    • Drain Efficiency: 75%
    • Linear Gain: 15.4 dB

    The QPD0405 is a dual-path discrete GaN on SiC HEMT in  DFN package which operates from 4.4 to 5.0 GHz. In each path is a single-stage amplifier transistor

    QPD0405 can deliver PSAT of 22 W at +48 V operation through each path.

    RoHS compliant.

    Typical Applications

      • W-CDMA / LTE
      • Macrocell Base Station Driver
      • Microcell Base Station
      • Small Cell
      • Active Antenna
      • 5G Massive MIMO
    Frequency Min(MHz) 4,400
    Frequency Max(MHz) 5,000
    Gain(dB) 15.4
    Psat(dBm) 43.4
    Drain Efficiency(%) 75
    Vd(V) 48
    Idq(mA) 32.5
    Package Type DFN
    Package(mm) 7.0 x 6.5
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN 5A991.g