QPD0405

4.4 - 5.0 GHz, 2 x 20 Watt, 48 Volt Dual GaN RF Transistor

The QPD0405 is a dual-path discrete GaN on SiC HEMT in DFN package which operates from 4.4 to 5.0 GHz. In each path is a single-stage amplifier transistor

QPD0405 can deliver PSAT of 22 W at +48 V operation through each path.

RoHS compliant.

Discontinued

Data sheet available upon request.
Contact your local sales representative for assistance.End of Life announced June 15, 2021 (PCN 21-0130).
Last Time Buy: December 25, 2021
Contact your local sales representative for assistance.

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Key Features

Operating Frequency Range: 4400 - 5000 MHz
Operating Drain Voltage: +48 V
Output Power (PSAT): 22 W
Drain Efficiency: 75%
Linear Gain: 15.4 dB

Typical Applications

W-CDMA / LTE
Macrocell Base Station Driver
Microcell Base Station
Small Cell
Active Antenna
5G Massive MIMO

Parameters

Frequency Min (MHz)

4,400

Frequency Max (MHz)

5,000

Gain (dB)

15.4

Psat (dBm)

43.4

Vd (V)

Package Type

DFN

Package Size (mm)

7.0 x 6.5

RoHS

Yes

Lead Free

Yes

Halogen Free

Yes

ITAR Restricted

ECCN

5A991.g

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