QPD1013

    DC - 2.7 GHz, 150 Watt, 65 V GaN RF Transistor

    Key Features

    • Frequency Range: DC - 2.7 GHz
    • Output Power (P3dB): 178 W at 1.8 GHz
    • Linear Gain: 21.8 dB typical at 1.8 GHz
    • Typical PAE3dB: 64.8 % at 1.8 GHz
    • Operating voltage: 65V
    • Low thermal resistance package
    • CW and Pulse capable
    • 7.2 x 6.6 mm package

    The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz.  This is a single stage unmatched power amplifier transistor in an over-molded plastic package.  The high power and wide bandwidth of the QPD1013 makes it suitable for many different applications from DC to 2.7 GHz.

    The device is housed in an industry-standard 7.2 x 6.6 mm surface mount DFN package.

    Lead-free and ROHS compliant.  Evaluation boards are available upon request.

    Typical Applications

      • Military Radar
      • Commercial Radar
      • Land Mobile and Military Radio Communications
      • Active Antennas
      • Base Stations
      • Jammers
    Frequency Min(MHz) DC
    Frequency Max(MHz) 2,700
    Gain(dB) 21.8
    PAE(%) 64.8
    VD(V) 65
    Idq(mA) 240
    Package Type DFN
    Package(mm) 7.2 x 6.6
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Radar > L Band Radar

      L Band Radar