QPD1029L

    1500 Watt, 65 Volt, 1.2 - 1.4 GHz, GaN RF Input-Matched Transistor

    Key Features

    • Frequency Range: 1.2 - 1.4 GHz
    • Output Power (P3dB): 1500 W at 1.3 GHz
    • Linear Gain: 21.3 dB typical at 1.3 GHz
    • Typical PAE3dB: 75 % at 1.3 GHz
    • Operating voltage: 65 V
    • Low thermal resistance package
    • CW and Pulse capable

    The Qorvo QPD1029L is a 1500 W (P3dB) discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations.

    Lead-free and ROHS compliant.

    For additional information on GaN thermal performance refer to the following application note and video.

    Typical Applications

      • L-Band radar-amplifier application

    Product Categories

    Application Categories

    Frequency Min(MHz) 1,200
    Frequency Max(MHz) 1,400
    Psat(dBm) 61.8
    PAE(%) 75
    VD(V) 65
    Idq(mA) 1,500
    Package Type NI-1230 (Eared)
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Radar > L Band Radar

      L Band Radar