QPD1881L
400 Watt, 50 Volt, 2.7 - 2.9 GHz, GaN RF Power Transistor
End of Life announced January 23, 2023 (PCN 23-0016).
Last Time Buy: February 3, 2024
Contact your local sales representative for assistance.
Key Features
- Frequency Range: 2.7 - 2.9 GHz
- Output Power (P3dB): 427 W at 2.9 GHz
- Linear Gain: 21.2 dB typical at 2.9 GHz
- Typical PAE3dB: 75.1 % at 2.9 GHz
- Operating voltage: 50 V
- Low thermal resistance package
- CW and Pulse capable
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The Qorvo QPD1881L is a 400 W (P3dB) discrete GaN on SiC HEMT which operates from 2.7 to 2.9 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for civilian radar, weather radar and test instrumentation. The device can support both CW and pulsed operations.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
Typical Applications
- Civilian Radar
- Weather Radar
- Test Instrumentation
Product Categories
Application Categories
| Frequency Min(MHz) | 2,700 |
| Frequency Max(MHz) | 2,900 |
| Gain(dB) | 21.2 |
| Psat(dBm) | 56.3 |
| PAE(%) | 75.1 |
| Vd(V) | 50 |
| Idq(mA) | 700 |
| Package Type | NI-780 (Eared) |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.