QPD1881L

    400 Watt, 50 Volt, 2.7 - 2.9 GHz, GaN RF Power Transistor

    Key Features

    • Frequency Range: 2.7 - 2.9 GHz
    • Output Power (P3dB): 427 W at 2.9 GHz
    • Linear Gain: 21.2 dB typical at 2.9 GHz
    • Typical PAE3dB: 75.1 % at 2.9 GHz
    • Operating voltage: 50 V
    • Low thermal resistance package
    • CW and Pulse capable

    The Qorvo QPD1881L is a 400 W (P3dB) discrete GaN on SiC HEMT which operates from 2.7 to 2.9 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for civilian radar, weather radar and test instrumentation. The device can support both CW and pulsed operations.

    Lead-free and ROHS compliant.

    Evaluation boards are available upon request.

    Typical Applications

      • Civilian Radar
      • Weather Radar
      • Test Instrumentation

    Product Categories

    Application Categories

    Frequency Min(MHz) 2,700
    Frequency Max(MHz) 2,900
    Gain(dB) 21.2
    Psat(dBm) 56.3
    PAE(%) 75.1
    Vd(V) 50
    Idq(mA) 700
    Package Type NI-780 (Eared)
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99

    Modelithics® Qorvo GaN Library

    A Modelithics non-linear model is available for this product.

    Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.

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