3.4 - 3.8 GHz, 85 Watt, 48 V GaN RF Power Transistor

    Key Features

    • Frequency Range: 3.4-3.8GHz
    • Drain Voltage: 50V
    • Output Power (P3dB): 85W
    • Maximum Drain Efficiency: 70%
    • NI-400 Ceramic Package

    Qorvo's QPD3800 is a discrete GaN on SiC HEMT which operates from 3.4-3.8 GHz. The device is a single stage matched power amplifier transistor.

    The QPD38000 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.

    QPD3800 can deliver PSAT of 85 W at 50 V operation.

    Lead-free and ROHS compliant.

    Typical Applications

      • Wireless Communications
      • Macro Cell Base Station
      • Active Antennas
    Frequency Min(MHz) 3,400
    Frequency Max(MHz) 3,800
    Gain(dB) 21
    Psat(dBm) 49.3
    PAE(%) 70
    VD(V) 50
    Idq(mA) 180
    Package Type NI-400
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No