Qorvo's QPD3800 is a discrete GaN on SiC HEMT which operates from 3.4-3.8 GHz. The device is a single stage matched power amplifier transistor.
The QPD38000 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.
QPD3800 can deliver PSAT of 85 W at 50 V operation.
Lead-free and ROHS compliant.