3.4 - 3.8 GHz, 85 Watt, 48 V GaN RF Power Transistor

    Discontinued >

    End of Life announced March 2, 2021 (PCN 21-0056).
    Last Time Buy: September 13, 2021
    Contact your local sales representative for assistance.

    Key Features

    • Frequency Range: 3.4-3.8GHz
    • Drain Voltage: 50V
    • Output Power (P3dB): 85W
    • Maximum Drain Efficiency: 70%
    • NI-400 Ceramic Package

    Qorvo's QPD3800 is a discrete GaN on SiC HEMT which operates from 3.4-3.8 GHz. The device is a single stage matched power amplifier transistor.

    The QPD38000 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.

    QPD3800 can deliver PSAT of 85 W at 50 V operation.

    Lead-free and ROHS compliant.

    Typical Applications

      • Wireless Communications
      • Macro Cell Base Station
      • Active Antennas
    Frequency Min(MHz) 3,400
    Frequency Max(MHz) 3,800
    Gain(dB) 21
    Psat(dBm) 49.3
    PAE(%) 70
    Vd(V) 50
    Idq(mA) 180
    Package Type NI-400
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No

    Modelithics® Qorvo GaN Library

    A Modelithics non-linear model is available for this product.

    Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.

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