QPD3800
3.4 - 3.8 GHz, 85 Watt, 48 V GaN RF Power Transistor
End of Life announced March 2, 2021 (PCN 21-0056).
Last Time Buy: September 13, 2021
Contact your local sales representative for assistance.
Key Features
- Frequency Range: 3.4-3.8GHz
- Drain Voltage: 50V
- Output Power (P3dB): 85W
- Maximum Drain Efficiency: 70%
- NI-400 Ceramic Package
Qorvo's QPD3800 is a discrete GaN on SiC HEMT which operates from 3.4-3.8 GHz. The device is a single stage matched power amplifier transistor.
The QPD38000 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.
QPD3800 can deliver PSAT of 85 W at 50 V operation.
Lead-free and ROHS compliant.
Typical Applications
- Wireless Communications
- Macro Cell Base Station
- Active Antennas
Product Categories
Application Categories
| Frequency Min(MHz) | 3,400 |
| Frequency Max(MHz) | 3,800 |
| Gain(dB) | 21 |
| Psat(dBm) | 49.3 |
| PAE(%) | 70 |
| Vd(V) | 50 |
| Idq(mA) | 180 |
| Package Type | NI-400 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.