RFG1M20180
1.8 - 2.2 GHz, 180 Watt GaN Power Amplifier
Key Features
- Advance GaN HEMT Technology
- Typical Peak Modulated Power > 180W
- Advanced Heat-Sink Technology
- Single Circuit for 1.8GHz to 2.2GHz
- 48V Operation Typical Performance:
- POUT = 45.5dBm
- Gain = 15dB
- Drain Efficiency = 31%
- ACP = -38dBc
- Linearizable to -55dBc with DPD
- -25 to 85 degrees C Operating Temperature
- Optimized for Video Bandwidth and Minimized Memory Effects
- RF Tested for 3GPP Performance
- RF Tested for Peak Power Using IS95
- Large Signal Models Available
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Qorvo's RFG1M20180 is optimized for commercial infrastructure applications in the 1.8GHz to 2.2GHz frequency band, ideal for WCDMA and LTE applications. Using an advanced 48V high power density gallium nitride (GaN) semiconductor process optimized for high peak to average ratio applications, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RFG1M20180 is an input matched GaN transistor packaged in an air cavity ceramic package, which provides excellent thermal stability. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain, efficiency, and linearizable performance in a single amplifier.
Product Categories
Application Categories
| Frequency Min(MHz) | 1,800 |
| Frequency Max(MHz) | 2,200 |
| Gain(dB) | 15 |
| Psat(dBm) | 52.5 |
| Drain Efficiency(%) | 40 |
| Vd(V) | 48 |
| Idq(mA) | 600 |
| Package Type | RF400-2 with flange |
| ECCN | EAR99 |