Qorvo's T1G2028536-FL is a 285 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2 GHz.
The device is constructed with Qorvo's proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
|VD(V)||36 to 50|
This product appears in the following application block diagrams: