DC - 3.5 GHz, 55 Watt, 28 V GaN RF Power Transistor

    Key Features

    • Frequency: DC to 3.5 GHz
    • Linear Gain: 16 dB at 3.5 GHz
    • Operating Voltage: 28 V
    • Output Power (P3dB): 55 W at 3.5 GHz
    • Lead-free and RoHS compliant

    Qorvo's T2G4005528-FS is a 55 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.

    Lead-free and ROHS compliant

    Evaluation boards are available upon request.

    Typical Applications

      • Avionics
      • Civilian Radar
      • Military Radar
      • Professional and Military Radio
      • Radar
      • Test Instrumentation
      • Wideband and Narrowband Amplifiers
    Frequency Min(MHz) DC
    Frequency Max(MHz) 3,500
    Gain(dB) 16
    Psat(dBm) 47.2
    PAE(%) >
    Drain Efficiency(%) 52
    Vd(V) 28
    Idq(mA) 200
    Package Type NI-360
    RoHS Yes
    Lead Free Yes
    Halogen Free No
    ITAR Restricted No
    ECCN EAR99

    Modelithics® Qorvo GaN Library

    A Modelithics non-linear model is available for this product.

    Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.

    Request a free Modelithics model

    Modelithics® Qorvo GaN Library Brochure

    This product appears in the following application block diagrams:

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    • Applications > Defense & Aerospace > Radar > S Band Radar

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    • Applications > Defense & Aerospace > Radar > C Band Radar

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