Qorvo's TGA2622-SM is a packaged, high power X-Band amplifier fabricated on Qorvo's production 0.25um GaN on SiC process. Operating from 9-10GHz, the TGA2622-SM typically generates 35W of saturated output power with a power-added efficiency greater than 42% and 27.5dB of large signal gain.
The TGA2622-SM is packaged in a 7x7mm air-cavity, laminate based QFN. Both RF ports are internally DC blocked and matched to 50 ohms enabling simple system integration. Ideally suited for pulsed applications, the TGA2622-SM offers superior power, PAE and gain performance that can save costs on existing platforms while enabling the development of future systems.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
For additional information on GaN thermal performance refer to the following application note and video.
Frequency Min(GHz) | 9 |
Frequency Max(GHz) | 10 |
Pout(W) | 35 |
Gain(dB) | > 30 |
PAE(%) | > 42 |
Voltage(V) | 28 |
Current(mA) | 290 |
Package Type | QFN |
Package(mm) | 7.0 x 7.0 x 1.75 |
RoHS | Yes |
Lead Free | Yes |
Halogen Free | No |
ITAR Restricted | No |
ECCN | 3A001.B.2.B.2 |