DC - 14 GHz, 100 Watt Discrete Power GaN on SiC HEMT

    Key Features

    • Frequency range: DC to 14 GHz
    • 50.5 dBm nominal Psat at 3 GHz
    • 70.5% maximum PAE
    • 19.2 dB nominal power gain
    • Bias: VD = 12 to 32 V, IDQ = 400 - 2000 mA
    • Chip dimensions: 0.82 x 4.56 x 0.10 mm

    Qorvo's TGF2023-2-20 is a discrete 20 mm GaN on SiCHEMT which operates from DC to 14 GHz.

    The TGF2023-2-20 typically provides 50.5 dBm of saturated output power with power gain of 19.2 dB at 3 GHz. The maximum power added efficiency is 70.5% which makes the TGF2023-2-20 appropriate for high efficiency applications.

    The product is lead-free and RoHS compliant.

    Typical Applications

      • Broadband Wireless
      • Military
      • Space
    Frequency Min(MHz) DC
    Frequency Max(MHz) 14,000
    Gain(dB) 19.2
    Psat(dBm) 50.5
    PAE(%) 70.5
    Vd(V) 12 to 32
    Idq(mA) 400 to 2,000
    Package Type Die
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN 3A001.B.3.B.4

    Modelithics® Qorvo GaN Library

    A Modelithics non-linear model is available for this product.

    Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.

    Request a free Modelithics model

    Modelithics® Qorvo GaN Library Brochure

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Electronic Warfare > EW Signal Jammer

      EW Signal Jammer

    • Applications > Network Infrastructure > Satellite Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT