1. Thermal resistance determined to the back of a 20 mil Cu-Mo carrier plate with eutectic die attach (85 C)
2. Refer to the following document GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Qorvo's TGF2965-SM is a 6W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 0.03 to 3.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.
The device is housed in an industry-standard 3 x 3 mm surface mount QFN package.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
|Package(mm)||3 x 3|
This product appears in the following application block diagrams: