0.03 - 4.2 GHz High Power, Reflective SPDT Switch

    Key Features

    • 30 MHz to 4200 MHz Operation
    • Symmetrical SPDT
    • 0.35 dB Insertion Loss
    • 30 W pulsed power handling capacity
    • High Isolation: 40 dB at 2 GHz
    • 1.8 V Logic compatible in Vctrl lines
    • ESD HBM Rating: Class 2
    • 2.7 - 5.0 V Supply compatible
    • Compact Size: 5.0 x 5.0 mm

    The QPC3025 is a Silicon on Insulator (SOI) single-pole, double-throw (SPDT) switch, designed for use in 4G / 5G wireless infrastructure applications and other high performance communications systems. It offers low insertion loss in a symmetric topology with excellent linearity. The switch can handle upto 20 W CW and 30 W pulsed power with 50 Ohm load. No blocking capacitors are necessary on the RF ports. The switch ports are reflective. The QPC3025 is +1.8 V logic compatible and has a single-pin solution to disable the Negative Voltage Generator and supply negative voltage from off-chip, if necessary.

    The QPC3025 is packaged in a RoHS-compliant, compact 5 x 5 mm surface-mount leadless package.

    Typical Applications

      • Wireless Infrastructure
      • Macro or Pico-cell Basestations
      • Repeaters
    Switch Type SPDT
    Absorptive/Reflective Reflective
    Frequency Min(MHz) 30
    Frequency Max(MHz) 4,200
    Insertion Loss(dB) 0.35
    Isolation(dB) 40
    Switching Speed(ns) 8,580
    IIP3(dBm) 75
    IP0.1dB(dBm) 45
    Control Lines(#) 1
    Voltage(V) 2.7 to 5.5
    Current(mA) 0.09
    Package Type SMT
    Package(mm) 5.0 x 5.0
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN 5A991G

    This product appears in the following application block diagrams:

    • Applications > Network Infrastructure > Wireless Infrastructure > 5G > 5G Sub-6 GHz Massive MIMO

      5G Sub-6 GHz Massive MIMO