QPD0405
4.4 - 5.0 GHz, 2 x 20 Watt, 48 Volt Dual GaN RF Transistor
Discontinued >
End of Life announced June 15, 2021 (PCN 21-0130).
Last Time Buy: December 25, 2021
Contact your local sales representative for assistance.
Key Features
- Operating Frequency Range: 4400 - 5000 MHz
- Operating Drain Voltage: +48 V
- Output Power (PSAT): 22 W
- Drain Efficiency: 75%
- Linear Gain: 15.4 dB
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The QPD0405 is a dual-path discrete GaN on SiC HEMT in DFN package which operates from 4.4 to 5.0 GHz. In each path is a single-stage amplifier transistor
QPD0405 can deliver PSAT of 22 W at +48 V operation through each path.
RoHS compliant.
Typical Applications
- W-CDMA / LTE
- Macrocell Base Station Driver
- Microcell Base Station
- Small Cell
- Active Antenna
- 5G Massive MIMO
Product Categories
| Frequency Min(MHz) | 4,400 |
| Frequency Max(MHz) | 5,000 |
| Gain(dB) | 15.4 |
| Psat(dBm) | 43.4 |
| Drain Efficiency(%) | 75 |
| Vd(V) | 48 |
| Idq(mA) | 32.5 |
| Package Type | DFN |
| Package(mm) | 7.0 x 6.5 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | 5A991.g |