In the world of high-power, high-frequency devices, gallium arsenide (GaAs), pioneered by Qorvo, was the history-making technology in the early 1980s. Among other advantages, GaAs delivered substantially less noise at higher frequencies than anything that had come before it. Not surprisingly, GaAs became the norm in mobile phones, satellite communications and high-frequency radar systems.
Qorvo continues to chart new territory, and has been one of the first to achieve breakthroughs in gallium nitride (GaN) technology. With inherently better efficiency, power handling and durability, GaN is the emerging go-to technology for advanced RF systems. GaN-based amplifiers are providing RF system engineers with the flexibility to achieve significantly higher power and efficiency than GaAs while using fewer parts.
The superior current efficiency and space-saving value of GaN support these applications, just to name a few:
Now, with more than 15 years of expertise, Qorvo leads GaN product development for both defense and commercial applications, providing record-setting GaN reliability and compact, high-efficiency products. Qorvo drives the innovation of GaN products for next-generation systems — from DC through Ka-band — that successfully transition from the factory to the field, with robust performance, low maintenance and long operational lifetimes.