15 Watt, 50 Volt, 0.03 - 1.2 GHz, GaN RF Input-Matched Transistor

    Key Features

    • Frequency Range: 0.03 - 1.2 GHz
    • Output Power (P3dB): 12.5 W at 1 GHz
    • Linear Gain: 18.4 dB typical at 1 GHz
    • Typical PAE3dB: 69.5% at 1 GHz
    • Operating Voltage: 50V
    • Low Thermal Resistance Package
    • CW and Pulse Capable
    • 6 x 5 mm Package

    The QPD1014 is a 15W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 1200MHz on a 50V supply rail. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band.

    Lead-free and ROHS compliant.

    Evaluation boards are available upon request.

    Typical Applications

      • Military radar
      • Commercial radar
      • Land mobile and military radio communications
      • Active Antenna
      • Basestation
      • Jammers
    Frequency Min(MHz) 30
    Frequency Max(MHz) 1,200
    Gain(dB) 18.4
    Psat(dBm) 41
    PAE(%) 69.5
    Vd(V) 50
    Idq(mA) 25
    Package Type DFN
    Package(mm) 6.0 x 5.0
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99

    Modelithics® Qorvo GaN Library

    A Modelithics non-linear model is available for this product.

    Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.

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