1. Thermal resistance determined to the back of a 20 mil Cu-Mo carrier plate with eutectic die attach (85 C)
2. Refer to the following document GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Qorvo's QPA2211D is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating between 27 and 31 GHz, it achieves 5 W linear power with −25 dBc intermodulation distortion products and 26 dB small signal gain. Saturated output power is 14 W with power-added efficiency of 34%.
QPA2211D is ideally suited to support satellite communications and 5G infrastructure.
To simplify system integration, the QPA2211D is fully matched to 50 ohms with integrated DC blocking caps on both I/O ports.
The QPA2211D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications.
Lead-free and RoHS compliant.
|Package(mm)||2.740 x 2.552 x 0.050|