SiC JFETs

Qorvo's silicon carbide (SiC) JFETs are high-performance, normally-on JFET transistors, from 650 to 1700 V, with ultra-low on-resistance (RDS(on)) as low as 25 mohms. Gate charge (QG) is also low, allowing for low conduction and reduced switching loss. These products are also ideal for circuit protection applications.