GaAs pHEMTs (9)

    DC - 20 GHz, 180 um Discrete GaAs pHEMT Die
    DC
    20,000
    14
    22
    22
    1
    55
    8
    29
    Die
    DC - 20 GHz 250 um Discrete GaAs pHEMT
    DC
    20,000
    14
    24
    25
    0.9
    58
    8
    41
    Die
    DC - 20 GHz 400 um Discrete GaAs pHEMT
    DC
    20,000
    13
    26
    26
    1.1
    55
    8
    65
    Die
    DC - 20 GHz 600 um Discrete GaAs pHEMT
    DC
    20,000
    12
    28
    28
    1.4
    55
    8
    97
    Die
    DC - 20 GHz 800 um Discrete GaAs pHEMT
    DC
    20,000
    11.5
    29.5
    29.5
    56
    8
    129
    Die
    DC - 20 GHz 1200 um Discrete GaAs pHEMT
    DC
    20,000
    11
    31
    57
    8
    194
    Die
    DC - 20 GHz 1600 um Discrete GaAs pHEMT
    DC
    20,000
    10.4
    32.5
    63
    8
    258
    Die
    700 - 915 MHz High IP3 Dual pHEMT Low Noise Amplifier
    700
    915
    20.5
    20.7
    0.32
    4
    70
    QFN, 16-pin
    4.0 x 4.0 x 0.85
    1700 - 2000 MHz High IP3 Dual pHEMT Low Noise Amplifier
    1,700
    2,000
    17.9
    21.6
    0.36
    4.5
    50

    GaN HEMTs (84)

    35 Watt, 48 Volt, DC - 6 GHz GaN RF Power Transistor
    DC
    6,000
    18.8
    45.4
    77.8
    48
    30
    QFN
    4.0 x 3.0
    45 Watt, 48 Volt, DC - 4 GHz GaN RF Power Transistor
    DC
    4,000
    22.3
    46.9
    71.5
    48
    85
    QFN
    4.0 x 3.0
    DC - 3.6 GHz, 75 Watt, 48 V GaN RF Power Transistor
    DC
    3,600
    22.5
    48.7
    80
    48
    130
    DC - 3.6 GHz, 90 Watt, 48 V GaN RF Power Transistor
    DC
    3,600
    25
    49.5
    73
    48
    150
    0.03 - 1.215 GHz, 15 Watt, 28 V GaN RF Input-Matched Transistor
    30
    1,215
    19
    43.8
    78.2
    28
    50
    DFN
    5 x 6
    1.2 - 1.4 GHz, 500 Watt, 50 Volt, GaN RF IMFET
    1,200
    1,400
    19.9
    57.3
    66.7
    50
    750
    RF-565
    30 - 1200 MHz, 25 Watt, 50 V GaN RF Input-Matched Transistor
    30
    1,200
    20.8
    73.2
    50
    50
    DFN
    6.0 x 5.0
    DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor
    DC
    3,200
    > 17
    52
    70
    50
    260
    NI-360
    DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor
    DC
    3,200
    > 17
    52
    70
    50
    260
    NI-360
    DC - 4 GHz, 15 Watt, 50 V GaN RF Transistor
    DC
    4,000
    24
    42.3
    72
    50
    26
    QFN
    3 x 3
    DC - 4 GHz, 10 Watt, 50 V GaN RF Transistor
    DC
    4,000
    24.7
    40.4
    70
    50
    18
    QFN
    3 x 3
    7 Watt, 50 Volt, 0.03 - 1.2 GHz, GaN RF Input-Matched Transistor
    30
    1,200
    21
    39.4
    60
    50
    20
    DFN / SMT
    6 x 5
    DC - 2.7 GHz, 150 Watt, 65 V GaN RF Transistor
    DC
    2,700
    21.8
    64.8
    65
    240
    DFN
    7.2 x 6.6
    15 Watt, 50 Volt, 0.03 - 1.2 GHz, GaN RF Input-Matched Transistor
    30
    1,200
    18.4
    41
    69.5
    50
    25
    DFN
    6.0 x 5.0
    DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor
    DC
    3,700
    20
    48.5
    74
    50
    65
    NI-360
    DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor
    DC
    3,700
    20
    48.5
    74
    50
    65
    NI-360
    500 Watt, 50 Volt, DC - 1.7 GHz, GaN RF Transistor
    DC
    1,700
    23.9
    58.3
    77.4
    50
    1,000
    NI-780
    3.1 - 3.5 GHz, 450 Watt, 50 V GaN RF IMFET
    3,100
    3,500
    16.5
    56.6
    60
    50
    750
    RF-565
    17.40 x 24.00 x 4.31
    500 Watt, 50 Volt, 2.7 - 3.1 GHz, GaN RF IMFET
    2,700
    3,100
    17.7
    57.6
    67.9
    50
    750
    RF-565
    17.4 x 24 x 4.3
    500 Watt, 50 Volt, 2.9 - 3.3 GHz, GaN RF IMFET
    2,900
    3,300
    15.5
    57.7
    67
    50
    750
    RF-565
    30 Watt, 50 Volt, 2.7 - 3.5 GHz, GaN RF Input-Matched Transistor
    2,700
    3,500
    18.4
    45
    64
    50
    52.5
    DFN
    6 x 5
    DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor
    DC
    12,000
    24
    68.8
    32
    50
    QFN
    3.0 x 3.0
    1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor
    960
    1,215
    22.5
    62.7
    77.2
    65
    1,500
    NI-1230 (Earless)
    1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor
    960
    1,215
    22.5
    62.7
    77.2
    65
    1,500
    NI-1230 (Eared)
    1.8 - 2.4 GHz, 220 Watt, 48 V GaN RF Power Transistor
    1,800
    2,400
    24
    53.6
    80
    48
    360
    400 Watt, 50 Volt, 2.7 - 2.9 GHz, GaN RF Power Transistor
    2,700
    2,900
    21.2
    56.3
    75.1
    50
    700
    NI-780 (Eared)
    300 Watt, 48 Volt, 1.8-2.2 GHz GaN RF Power Transistor
    1,800
    2,200
    21
    55.7
    78.8
    48
    600
    NI400
    400 Watt, 48 Volt, 1.8 - 2.2 GHz GaN RF Power Transistor
    1,800
    2,200
    19.1
    56
    75.4
    48
    720
    NI-780
    2.575 - 2.635 GHz, 220 Watt, 48 V Doherty GaN RF Power Transistor
    2,575
    2,635
    15.9
    53.5
    53
    48
    210
    NI-780
    2.5 - 2.7 GHz, 110 Watt / 220 Watt, 48 Volt, Asymmetric Doherty
    2,500
    2,700
    16
    60
    48
    220
    NI-780
    2.62 - 2.69 GHz, 200 Watt, 48 V GaN RF Power Transistor
    2,620
    2,690
    23
    53
    75
    48
    360
    NI-400
    2.5 - 2.7 GHz, 360 Watt, 48 V GaN RF Power Transistor
    2,500
    2,700
    22
    55.6
    72
    48
    700
    NI-780
    2.5 - 2.7 GHz, 200 Watt, 48 V GaN RF Power Transistor
    2,500
    2,700
    23
    53
    72
    48
    360
    3.4 - 3.6 GHz, 180 Watt, 50 Volt GaN RF Power Transistor
    3,400
    3,600
    22
    52.6
    66
    50
    420
    NI-400
    3.4 - 3.8 GHz, 85 Watt, 48 V GaN RF Power Transistor
    3,400
    3,800
    21
    49.3
    70
    50
    180
    NI-400
    30 Watt, 28 Volt, 9.2 - 9.7 GHz, GaN RF IMFET
    9.2
    9.7
    9.1
    34.3
    48.6
    25
    240
    EHS Laminate
    4 x 4
    DC - 2 GHz, 285 Watt, 36 V GaN RF Power Transistor
    DC
    2,000
    19
    54.2
    54
    36 to 50
    576
    NI-780
    DC - 2 GHz, 285 Watt, 36 V GaN RF Power Transistor
    DC
    2,000
    19
    54.2
    54
    36 to 50
    576
    NI-780
    DC - 3.5 GHz, 45 Watt, 32 V GaN RF Power Transistor
    DC
    3,500
    > 19
    46.5
    52
    32
    220
    NI-360
    DC - 3.5 GHz, 45 Watt, 32 V GaN RF Power Transistor
    DC
    3,500
    > 19
    46.5
    52
    32
    220
    NI-360
    DC - 3.5 GHz, 120 Watt, 36 - 50 V GaN RF Power Transistor
    DC
    3,500
    16
    50.8
    52
    36 to 50
    360
    NI-360
    DC - 3.5 GHz, 120 Watt, 36 - 50 V GaN RF Power Transistor
    DC
    3,500
    16
    50.8
    52
    36 to 50
    360
    DC - 3.5 GHz, 2x200 Watt, 50 V GaN RF Power Transistor
    DC
    3,500
    18.1
    2 x 53.0
    67.6
    50
    520
    NI-650
    DC - 3.5 GHz, 2x200 Watt, 50 V GaN RF Power Transistor
    DC
    3,500
    18.1
    2 x 53.0
    67.6
    50
    520
    NI-650
    DC - 3.5 GHz, 30 Watt, 32 V GaN RF Power Transistor
    DC
    3,500
    16.5
    44.5
    49
    32
    150
    NI-360
    DC - 3.5 GHz, 30 Watt, 32 V GaN RF Power Transistor
    DC
    3,500
    16.5
    44.5
    49
    32
    150
    NI-360
    DC - 3.5 GHz, 55 Watt, 28 V GaN RF Power Transistor
    DC
    3,500
    16
    47.2
    52
    28
    200
    NI-360
    DC - 6 GHz, 7 Watt, 28 V GaN RF Power Transistor
    DC
    6,000
    17
    40
    53
    28
    50
    NI-200
    DC - 6 GHz, 15 Watt, 28 V GaN RF Power Transistor
    DC
    6,000
    15.5
    42
    72
    28
    100
    NI-200
    DC - 6 GHz, 15 Watt, 28 V GaN RF Power Transistor
    DC
    6,000
    15.5
    42
    72
    28
    100
    NI-200
    DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor
    DC
    6,000
    14
    45
    50
    28
    200
    NI-200
    DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor
    DC
    6,000
    14
    45
    50
    28
    200
    NI-200
    DC - 18 GHz, 6 Watt Discrete Power GaN on SiC HEMT
    DC
    18,000
    18
    38
    71.6
    12 to 32
    25 to 125
    Die
    DC - 18 GHz, 12 Watt Discrete Power GaN on SiC HEMT
    DC
    18,000
    21
    40.1
    73.3
    12 to 32
    50 to 250
    Die
    DC - 18 GHz, 25 Watt Discrete Power GaN on SiC HEMT
    DC
    18,000
    18
    43
    78.3
    12 to 32
    100 to 500
    Die
    DC - 14 GHz, 50 Watt Discrete Power GaN on SiC HEMT
    DC
    14,000
    19.8
    47.3
    69.5
    12 to 32
    200 to 1,000
    Die
    DC - 14 GHz, 100 Watt Discrete Power GaN on SiC HEMT
    DC
    14,000
    19.2
    50.5
    70.5
    12 to 32
    400 to 2,000
    Die
    DC - 4 GHz, 200 Watt, 50 V GaN RF Power Transistor
    DC
    4,000
    > 14
    53
    58
    32 to 50
    250
    NI-360
    DC - 4 GHz, 200 Watt, 50 V GaN RF Power Transistor
    DC
    4,000
    > 14
    53
    58
    32 to 50
    250
    NI-360
    DC - 3.5 GHz, 100 Watt, 28 V GaN RF Power Transistor
    DC
    3,500
    > 14
    50.3
    > 50
    28
    260
    NI-360
    DC - 3.5 GHz, 100 Watt, 28 V GaN RF Power Transistor
    DC
    3,500
    > 14
    50.3
    > 50
    28
    260
    NI-360
    DC - 3.5 GHz, 100 Watt, 28 V GaN RF Power Transistor
    DC
    3,500
    17.4
    51.2
    72
    28
    260
    NI-360
    DC - 25 GHz, 7 Watt, 28 V GaN RF Transistor
    DC
    25,000
    15
    38.6
    57
    28
    80
    die
    0.83 x 0.55 x 0.10
    DC - 25 GHz, 14 Watt, 28 V GaN RF Transistor
    DC
    25,000
    14
    41.5
    49
    28
    160
    die
    1.46 x 0.55 x 0.10
    DC - 25 GHz, 5 Watt, 28 V GaN RF Transistor
    DC
    25,000
    16
    36.8
    60
    28
    40
    die
    0.60 x 0.55 x 0.10
    DC - 25 GHz, 10 Watt, 28 V GaN RF Transistor
    DC
    25,000
    16
    40
    58
    28
    80
    die
    0.98 x 0.55 x 0.10
    DC - 25 GHz, 4 Watt, 28 V GaN RF Transistor
    DC
    25,000
    16
    36
    60
    28
    40
    die
    0.52 x 0.55 x 0.10
    DC - 25 GHz, 2 Watt, 28 V GaN RF Transistor
    DC
    25,000
    18
    33.8
    59
    28
    20
    die
    0.41 x 0.55 x 0.10
    DC - 14 GHz, 7 Watt Discrete Power GaN on SiC HEMT
    DC
    14,000
    20.4
    38.4
    75.7
    32
    25
    Die
    DC - 12 GHz, 12 Watt Discrete Power GaN on SiC HEMT
    DC
    12,000
    18.2
    41.2
    73.7
    32
    50
    Die
    DC - 12 GHz, 27 Watt Discrete Power GaN on SiC HEMT
    DC
    12,000
    19.6
    44.5
    71.6
    32
    100
    Die
    DC - 12 GHz, 40 Watt Discrete Power GaN on SiC HEMT
    DC
    12,000
    19.2
    46.4
    69
    32
    150
    Die
    DC - 12 GHz, 55 Watt Discrete Power GaN on SiC HEMT
    DC
    12,000
    19.3
    47.6
    69.7
    32
    200
    Die
    DC - 12 GHz, 70 Watt Discrete Power GaN on SiC HEMT
    DC
    12,000
    19.2
    48.6
    69.6
    32
    250
    Die
    0.03 - 3 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor
    30
    3,000
    18
    37.8
    63
    32
    25
    QFN
    3 x 3
    DC - 12 GHz, 5 Watt, 32 V GaN RF Transistor
    DC
    12,000
    13
    37.8
    50
    32
    25
    QFN
    3 x 3
    DC - 12 GHz, 20 Watt, 32 V GaN RF Transistor
    DC
    12,000
    11
    42.8
    46
    32
    100
    QFN
    4 x 3
    DC - 12 GHz, 25 Watt, 32 V GaN RF Transistor
    DC
    12,000
    11
    43.4
    45
    32
    150
    QFN
    4 x 3
    0.03 - 3.0 GHz, 10 Watt, 32 V GaN RF Input-Matched Transistor
    30
    3,000
    17
    40.4
    63
    32
    50
    QFN
    3 x 3
    4 - 6 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor
    4,000
    6,000
    12.7
    38.3
    59.6 @ 5GHz
    32
    25
    QFN
    3 x 3
    0.03 - 4.0 GHz, 30 Watt, 32 V GaN RF Transistor
    30
    4,000
    19
    45
    73
    32
    65
    QFN
    4 x 3
    DC - 4 GHz, 5 Watt GaN Power Transistor
    DC
    4,000
    > 19
    37
    64
    32
    25
    DC - 4 GHz, 15 Watt GaN Power Transistor
    DC
    4,000
    > 19
    43.5
    63
    32
    70
    DC - 4 GHz, 30 Watt GaN Power Transistor
    DC
    4,000
    17
    44.6
    60
    32
    70

    Low Noise Amplifiers (4)

    50 - 1500 MHz High IP3 Dual Low Noise Amplifier
    0.05
    1.5
    18.4
    0.62
    21.4
    40
    5
    55
    QFN
    4 x 4 x 0.85
    50 - 1500 MHz High IP3 Dual Low Noise Amplifier
    0.05
    1.5
    18
    0.6
    21.5
    38.8
    5
    57
    QFN
    4 x 4 x 0.85
    1500 - 2300 MHz High IP3 Dual Low Noise Amplifier
    1.5
    2.3
    18
    0.62
    20.8
    39.8
    5
    57
    QFN
    4 x 4 x 0.85
    2300 - 6000 MHz High IP3 Dual Low Noise Amplifier
    2.3
    6
    18.4
    0.8
    22.5
    38.2
    5
    57
    QFN
    4 x 4 x 0.85