Qorvo's FP1189-G is a high performance 0.5 Watt HFET (Heterostructure FET) in a low-cost SOT-89 surface mount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm output IP3 performance and an output power of +27 dBm at 1 dB compression, while providing 20.5 dB gain at 900 MHz.
The device conforms to Qorvo's long history of producing high reliability and quality components. The FP1189-G has an associated MTTF of greater than 100 years at a mounting temperature of 85 °C and is available in both the standard SOT-89 package and the environmentally-friendly lead-free / green / RoHS-compliant and green SOT-89 package. All devices are 100% RF and DC tested.
The product is targeted for use as driver amplifiers for wireless infrastructure where high performance and high efficiency are required.