FP1189-G
0.05 - 4 GHz, 0.5 Watt GaAs HFET
Use CLY2 for new designs
Key Features
- 50 to 4000 MHz
- +27 dBm P1dB
- +40 dBm Output IP3
- High drain efficiency
- 20.5 dB gain @ 900 MHz
- Lead-free / green / RoHS compliant
- SOT-89 package
- MTTF > 100 years
Qorvo's FP1189-G is a high performance 0.5 Watt HFET (Heterostructure FET) in a low-cost SOT-89 surface mount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm output IP3 performance and an output power of +27 dBm at 1 dB compression, while providing 20.5 dB gain at 900 MHz.
The device conforms to Qorvo's long history of producing high reliability and quality components. The FP1189-G has an associated MTTF of greater than 100 years at a mounting temperature of 85 °C and is available in both the standard SOT-89 package and the environmentally-friendly lead-free / green / RoHS-compliant and green SOT-89 package. All devices are 100% RF and DC tested.
The product is targeted for use as driver amplifiers for wireless infrastructure where high performance and high efficiency are required.
Typical Applications
- CATV / DBS
- Defense / Homeland Security
- Fixed Wireless
- Industrial, Scientific and Medical (ISM)
- Mobile Infrastructure
| Frequency Min(MHz) | 50 |
| Frequency Max(MHz) | 4,000 |
| Gain(dB) | 19 |
| OP1dB(dBm) | 27 |
| NF(dB) | 2.7 |
| Vd(V) | 8 |
| Idq(mA) | 125 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |