QPA1017D

    5.7 - 7.0 GHz, 50 Watt GaN Power Amplifier

    Key Features

    • Frequency Range: 5.7 - 7.0 GHz
    • PSAT (PIN = 26 dBm): > 47 dBm
    • PSAT (PIN = 26 dBm): > 40%
    • Power Gain (PIN = 26 dBm): > 21 dB
    • IM3 (POUT/Tone = 41 dBm): -25 dBc
    • Small Signal Gain: > 28 dB
    • Bias: VD = 24 V, IDQ = 1.5 A, VG = −2.5 V typical
    • Chip Dimensions: 4.79 x 6.45 x 0.10 mm

    Qorvo's QPA1017D is a high power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). The QPA1017D operates from 5.7 – 7.0 GHz, provides 50 W of saturated output power with 21 dB of large signal gain and greater than 40% power–added efficiency.  For satellite communications applications, QPA1017D provides 25 W linear power with 25 dBc third order intermodulation distortion products.  

    To simplify system integration, QPA1017D is fully matched to 50 ohms.  Input port is DC grounded for improved ESD performance, output port is AC coupled with integrated DC blocking capacitor.  

    Lead-free and RoHS compliant.

    For additional information on GaN thermal performance refer to the following application note and video.

    Typical Applications

      • C-Band Radar
      • Satellite Communication
    Frequency Min(GHz) 5.7
    Frequency Max(GHz) 7
    Psat(dBm) 47
    Gain(dB) 28
    PAE(%) 4
    Voltage(V) 24
    Current(mA) 1,500
    Package Type Die
    Package(mm) 4.79 x 6.45 x 0.10
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Communications > Multi-Band VSAT

      Multi-Band VSAT

    • Applications > Defense & Aerospace > Radar > C Band Radar

      C Band Radar

    • Applications > Network Infrastructure > Satellite Communications > Multi-Band VSAT

      Multi-Band VSAT