QPD0030

    DC - 4 GHz, 45 Watt, 48 Volt GaN RF Power Transistor

    Key Features

    • Frequency range: DC to 4 GHz
    • Output Power (P3dB): 49 W at 2.2 GHz
    • Linear Gain: 22.3 dB typical at 2.2 GHz
    • Typical PAE3dB: 71.5 % at 2.2 GHz
    • Operating voltage: 48V
    • Low thermal resistance package
    • CW and Pulse capable

    The QPD0030 is a 45W (P3dB) unmatched discrete GaN on SiC HEMT which operates from DC to 4GHz on a 48V supply rail. It is ideally suited for basestation, radar and communications applications and can support both CW and pulsed mode of operations.

    The QPD0030 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0030 can also be used as a driver in a microcell base station power amplifier.

    The device is housed in an industry-standard 4 x 3 mm surface mount QFN package.

    Lead-free and ROHS compliant.

    Evaluation boards are available upon request.

    Typical Applications

      • Active Antennas
      • Land Mobile Radio
      • Micro Cell Base Station
      • Military Radio Communications
    Frequency Min(MHz) DC
    Frequency Max(MHz) 4,000
    Gain(dB) 22.3
    Psat(dBm) 46.9
    PAE(%) 71.5
    Vd(V) 48
    Idq(mA) 85
    Package Type QFN
    Package(mm) 4.0 x 3.0
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99

    Modelithics® Qorvo GaN Library

    A Modelithics non-linear model is available for this product.

    Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.

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    Modelithics® Qorvo GaN Library Brochure

    This product appears in the following application block diagrams:

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