45 Watt, 48 Volt, DC - 4 GHz GaN RF Power Transistor

    Key Features

    • Frequency range: DC to 4 GHz
    • Output Power (P3dB): 49 W at 2.2 GHz
    • Linear Gain: 22.3 dB typical at 2.2 GHz
    • Typical PAE3dB: 71.5 % at 2.2 GHz
    • Operating voltage: 48V
    • Low thermal resistance package
    • CW and Pulse capable

    The QPD0030 is a 45W (P3dB) unmatched discrete GaN on SiC HEMT which operates from DC to 4GHz on a 48V supply rail. It is ideally suited for basestation, radar and communications applications and can support both CW and pulsed mode of operations.

    The QPD0030 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0030 can also be used as a driver in a microcell base station power amplifier.

    The device is housed in an industry-standard 4 x 3 mm surface mount QFN package.

    Lead-free and ROHS compliant.

    Evaluation boards are available upon request.

    Typical Applications

      • Active Antennas
      • Land Mobile Radio
      • Micro Cell Base Station
      • Military Radio Communications
    Frequency Min(MHz) DC
    Frequency Max(MHz) 4,000
    Gain(dB) 22.3
    Psat(dBm) 46.9
    PAE(%) 71.5
    VD(V) 48
    Idq(mA) 85
    Package Type QFN
    Package(mm) 4.0 x 3.0
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Defense & Aerospace > Electronic Warfare > EW Signal Jammer

      EW Signal Jammer

    • Applications > Network Infrastructure > Satellite Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Network Infrastructure > Wireless Infrastructure > Macro Base Station

      Macro Base Station