QPD1028

    750 W, 65 V, 1.2 - 1.4 GHz, GaN on SiC RF Transistor

    Key Features

    • Operating Frequency Range: 1.2 - 1.4 GHz
    • Saturated Output Power PSAT: 59dBm
    • Drain Efficiency at PSAT: 70%
    • Large Signal Gain at PSAT: 18 dB
    • Bias: VDS=+65V, IDQ=750mA
    • Package Type: NI-780
    • Package Dimensions: 20.57 x 9.78 x 3.63 mm

    The QPD1028 is a 750W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 59dBm of saturated output power with 18dB of large-signal gain and 70% of drain efficiency.

    Input pre-match within the package results in ease of external board match and saves board space. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations.
    Evaluation boards are available upon request.
     

    Typical Applications

      • L-Band Radar
      • ISM

    Product Categories

    Application Categories

    Frequency Min(MHz) 1,200
    Frequency Max(MHz) 1,400
    Gain(dB) 18
    OP1dB(dBm) 58.75
    Psat(dBm) 59
    Drain Efficiency(%) 70
    Vd(V) 65
    Idq(mA) 750
    Package Type NI-780
    Package(mm) 20.57 x 9.78 x 3.63
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99