DC - 6 GHz, 7 Watt, 28 V GaN RF Power Transistor

    Key Features

    • Frequency: DC to 6 GHz
    • Linear Gain: 17 dB at 3.3 GHz
    • Operating Voltage: 28 V
    • Output Power (P3dB): 10 W at 3.3 GHz
    • Lead-free and RoHS compliant
    • Low thermal resistance package

    Qorvo's T2G6000528-Q3 is a 10 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.

    Lead-free and ROHS compliant

    Evaluation boards are available upon request.

    Typical Applications

      • Cellular Infrastructure
      • General Purpose RF Power
      • Jammers
      • Professional Radio Systems
      • Radar
      • Test Instrumentation
      • Wideband and Narrowband Defense and Commercial Communication Systems
    Frequency Min(MHz) DC
    Frequency Max(MHz) 6,000
    Gain(dB) 17
    Psat(dBm) 40
    Drain Efficiency(%) 53
    VD(V) 28
    Idq(mA) 50
    Package Type NI-200
    RoHS Yes
    Lead Free Yes
    Halogen Free No
    ITAR Restricted No
    ECCN EAR99

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT

    • Applications > Defense & Aerospace > Electronic Warfare > EW Signal Jammer

      EW Signal Jammer

    • Applications > Network Infrastructure > Satellite Communications > Ka Band Saturated VSAT

      Ka Band Saturated VSAT