DC - 6 GHz, 10 Watt, 28 V GaN RF Power Transistor

    Key Features

    • Frequency: DC to 6 GHz
    • Linear Gain: 17 dB at 3.3 GHz
    • Operating Voltage: 28 V
    • Output Power (P3dB): 10 W at 3.3 GHz
    • Lead-free and RoHS compliant
    • Low thermal resistance package

    Qorvo's T2G6000528-Q3 is a 10 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.

    Lead-free and ROHS compliant

    Evaluation boards are available upon request.

    Typical Applications

      • Cellular Infrastructure
      • General Purpose RF Power
      • Jammers
      • Professional Radio Systems
      • Radar
      • Test Instrumentation
      • Wideband and Narrowband Defense and Commercial Communication Systems
    Frequency Min(MHz) DC
    Frequency Max(MHz) 6,000
    Gain(dB) 17
    Psat(dBm) 40
    Drain Efficiency(%) 53
    Vd(V) 28
    Idq(mA) 50
    Package Type NI-200
    RoHS Yes
    Lead Free Yes
    Halogen Free No
    ITAR Restricted No
    ECCN EAR99

    Modelithics® Qorvo GaN Library

    A Modelithics non-linear model is available for this product.

    Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.

    Request a free Modelithics model

    Modelithics® Qorvo GaN Library Brochure

    This product appears in the following application block diagrams:

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