TGA2624-SM

9 - 10 GHz, 20 Watt GaN Power Amplifier

Key Features

  • Frequency range: 9 - 10 GHz
  • Pout: 43 dBm (PIN = 18 dBm)
  • PAE: > 40 % (PIN = 18 dBm)
  • Power gain: 25 dB (PIN = 18 dBm)
  • Bias: VD = 28 V, IDQ = 365 mA, VG = -2.5 V typical (Pulsed: PW = 100 us, DC = 10%)
  • Package dimensions: 7 x 7 x 1.75 mm

Qorvo's TGA2624-SM is a packaged, high power X-Band amplifier fabricated on Qorvo's production 0.25um GaN on SiC process. Operating from 9-10GHz, the TGA2624-SM typically generates 20W of saturated output power with a power-added efficiency greater than 40% and 25dB of large signal gain.

The TGA2624-SM is packaged in a 7x7mm air-cavity, laminate based QFN. Both RF ports are internally DC blocked and matched to 50 ohms enabling simple system integration. Ideally suited for pulsed applications, the TGA2624-SM offers excellent power, PAE and gain performance that can save costs on existing platforms while enabling the development of future systems.

Lead-free and RoHS compliant.

Evaluation boards are available upon request.

For additional information on GaN thermal performance refer to the following application note and video.

Typical Applications

    • Weather and Marine Radar
    • EW Signal Jammers
    • X Band Radar
    • Repeaters / Boosters / DAS