TGF2957
DC - 12 GHz, 70 Watt Discrete Power GaN on SiC HEMT
End of Life announced March 24, 2021 (PCN 21-0070).
Last Time Buy: October 4, 2021
Recommended replacement for new designs: TGF2023-2-20
Contact your local sales representative for assistance.
Key Features
- Frequency range: DC - 12 GHz
- 48.6dBm nominal Psat at 3 GHz
- 69.6% maximum PAE at 3 GHz
- 19.2dB nominal power gain at 3 GHz
- Bias: Vd = 32V, Idq = 250mA
- Chip dimensions: 0.82 x 3.66 x 0.10 mm
Qorvo's TGF2957 is a discrete 12.6 mm GaN on SiC HEMT which operates from DC-12 GHz.
The TGF2957 typically provides 48.6 dBm of saturated output power with power gain of 19.2 dB at 3 GHz. The maximum power added efficiency is 69.6 % which makes the TGF2957 appropriate for high efficiency applications.
Lead-free and RoHS compliant.
Typical Applications
- Broadband Amplifiers
- High Efficiency Power Amplifiers
- Marine Radar
- Military Communications
- Point-to-point Communications
- Satellite Communications (Satcom)
Product Categories
Application Categories
| Frequency Min(MHz) | DC |
| Frequency Max(MHz) | 12,000 |
| Gain(dB) | 19.2 |
| Psat(dBm) | 48.6 |
| PAE(%) | 69.6 |
| Vd(V) | 32 |
| Idq(mA) | 250 |
| Package Type | Die |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | 3A001.B.3.B.2 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.