DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor

    Key Features

    • Frequency range: DC to 3.6 GHz
    • Drain voltage: 48V
    • Output power (P3dB): 90W
    • Maximum drain efficiency: 73%
    • 7.2 x 6.6 mm DFN

    The QPD0060 is a wide band over-molded DFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor.

    The QPD0060 can be used in Doherty architecture for the final stage of a base station amplifier for small cell, microcell, and active antenna systems. The QPD0060 can also be used as a driver in a macrocell base station power amplifier.

    The wide bandwidth of the QPD0060 makes it suitable for many different applications from DC to 2.7 GHz. QPD0060 can deliver PSAT of 89.1 W at +48 V operation at 2.1 GHz.

    Lead-free and RoHS compliant.

    For additional information on GaN thermal performance refer to the following application note and video.

    Typical Applications

      • Active Antennas
      • Macro Cell Base Station
      • Micro Cell Base Station
      • Wireless Communications
    Frequency Min(MHz) DC
    Frequency Max(MHz) 3,600
    Gain(dB) 25
    Psat(dBm) 49.5
    PAE(%) 73
    Vd(V) 48
    Idq(mA) 150
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99

    Modelithics® Qorvo GaN Library

    A Modelithics non-linear model is available for this product.

    Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.

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    Modelithics® Qorvo GaN Library Brochure

    This product appears in the following application block diagrams:

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