DC - 12 GHz, 70 Watt Discrete Power GaN on SiC HEMT

    Discontinued >

    End of Life announced March 24, 2021 (PCN 21-0070).
    Last Time Buy: October 4, 2021
    Recommended replacement for new designs: TGF2023-2-20
    Contact your local sales representative for assistance.

    Key Features

    • Frequency range: DC - 12 GHz
    • 48.6dBm nominal Psat at 3 GHz
    • 69.6% maximum PAE at 3 GHz
    • 19.2dB nominal power gain at 3 GHz
    • Bias: Vd = 32V, Idq = 250mA
    • Chip dimensions: 0.82 x 3.66 x 0.10 mm

    Qorvo's TGF2957 is a discrete 12.6 mm GaN on SiC HEMT which operates from DC-12 GHz.

    The TGF2957 typically provides 48.6 dBm of saturated output power with power gain of 19.2 dB at 3 GHz. The maximum power added efficiency is 69.6 % which makes the TGF2957 appropriate for high efficiency applications.

    Lead-free and RoHS compliant.

    Typical Applications

      • Broadband Amplifiers
      • High Efficiency Power Amplifiers
      • Marine Radar
      • Military Communications
      • Point-to-point Communications
      • Satellite Communications (Satcom)
    Frequency Min(MHz) DC
    Frequency Max(MHz) 12,000
    Gain(dB) 19.2
    Psat(dBm) 48.6
    PAE(%) 69.6
    Vd(V) 32
    Idq(mA) 250
    Package Type Die
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN 3A001.B.3.B.2

    Modelithics® Qorvo GaN Library

    A Modelithics non-linear model is available for this product.

    Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.

    Request a free Modelithics model

    Modelithics® Qorvo GaN Library Brochure

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