Qorvo's TGF2957 is a discrete 12.6 mm GaN on SiC HEMT which operates from DC-12 GHz.
The TGF2957 typically provides 48.6 dBm of saturated output power with power gain of 19.2 dB at 3 GHz. The maximum power added efficiency is 69.6 % which makes the TGF2957 appropriate for high efficiency applications.
Lead-free and RoHS compliant.
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.
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