1. Thermal resistance determined to the back of a 20 mil Cu-Mo carrier plate with eutectic die attach (85 C)
2. Refer to the following document GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Qorvo's QPA2210D is a Ka-band power amplifier fabricated on Qorvo's 0.15 um GaN on SiC process (QGaN15). Operating between 27 and 31 GHz, it achieves 2.5 W linear power with −25 dBc intermodulation distortion products and 25 dB small signal gain. Saturated output power is 7 W with power-added efficiency of 32%.
QPA2210D is ideally suited to support satellite communications and 5G infrastructure.
To simplify system integration, the QPA2210D is fully matched to 50 ohms with integrated DC blocking caps on both I/O ports.
The QPA2210D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications.
Lead-free and RoHS compliant.
|Package(mm)||2.740 x 1.432 x 0.050|