DC - 20 GHz, 180 um Discrete GaAs pHEMT Die

    Key Features

    • Frequency Range: DC - 20 GHz
    • Typical Output Power P1dB: 22 dBm
    • Typical Gain at 12 GHz: 14 dB
    • Typical PAE at 12 GHz: 55%
    • Typical NF at 12 GHz: 1 dB
    • No Vias
    • Chip Dimensions: 0.41 x 0.34 x 0.10 mm

    Qorvo's QPD2018D is a discrete 180-micron pHEMT which operates from DC to 20 GHz. The QPD2018D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.

    The QPD2018D typically provides 22 dBm of output power at P1dB with gain of 14 dB and 55% power-added efficiency at 1 dB compression. This performance makes the QPD2018D appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.   

    Lead-free and RoHS compliant.

    Typical Applications

      • Communications
      • Radar
      • Point-to-Point Radio
      • Satellite Communications
    Frequency Min(MHz) DC
    Frequency Max(MHz) 20,000
    Gain(dB) 14
    OP1dB(dBm) 22
    Psat(dBm) 22
    NF(dB) 1
    PAE(%) 55
    Vd(V) 8
    Idq(mA) 29
    Package Type Die
    Package(mm) 0.41 x 0.34 x 0.10
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99