1. Thermal resistance determined to the back of a 20 mil Cu-Mo carrier plate with eutectic die attach (85 C)
2. Refer to the following document GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Qorvo's TGA2595-CP is a balanced Ka-Band power amplifier fabricated on Qorvo's TQGaN15 0.15 um GaN on SiC process. The balanced configuration supports low return loss and improves robustness into non-ideal loads. Operating from 27.5 to 31 GHz, the TGA2595-CP achieves 39 dBm saturated output power with power-added efficiency of > 22 % and power gain of 21 dB.
The TGA2595-CP is packaged in a 10-lead 15x15 mm bolt-down package with a Cu base for superior thermal management. To simply system integration, the TGA2595-CP is fully matched to 50 ohms with integrated DC blocking capacitors on both I/O ports.
The TGA2595-CP is ideally suited for both commercial and defense satellite communications.
|Package(mm)||15.2 x 15.2 x 5.2|