TGA2595-CP
27.5 - 31 GHz, 8 Watt GaN Power Amplifier
Key Features
- Pout: 39 dBm (PIN = 18 dBm)
- PAE: > 22 % (PIN = 18 dBm)
- Power gain: 21 dB (PIN = 18 dBm)
- IM3 at 30 dBm/Tone = -27 dBc
- IM5 at 30 dBm/Tone = -46 dBc
- Bias: VD = 20 V, IDQ = 560 mA, VG = -2.5 V typical
- Package dimensions: 15.2 x 15.2 x 5.2 mm
Notes:
1. Thermal resistance determined to the back of a 20 mil Cu-Mo carrier plate with eutectic die attach (85 C)
2. Refer to the following document GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Qorvo's TGA2595-CP is a balanced Ka-Band power amplifier fabricated on Qorvo's TQGaN15 0.15 um GaN on SiC process. The balanced configuration supports low return loss and improves robustness into non-ideal loads. Operating from 27.5 to 31 GHz, the TGA2595-CP achieves 39 dBm saturated output power with power-added efficiency of > 22 % and power gain of 21 dB.
The TGA2595-CP is packaged in a 10-lead 15x15 mm bolt-down package with a Cu base for superior thermal management. To simply system integration, the TGA2595-CP is fully matched to 50 ohms with integrated DC blocking capacitors on both I/O ports.
The TGA2595-CP is ideally suited for both commercial and defense satellite communications.
Typical Applications
- Commercial Communications
- Military Communications
- Satellite Communications (Satcom)
- Satellite Ground Terminals
- EW Signal Jammers
- Repeaters / Boosters / DAS
Product Categories
Application Categories
| Frequency Min(GHz) | 27.5 |
| Frequency Max(GHz) | 31 |
| Pout(W) | 8 |
| Gain(dB) | 21 |
| PAE(%) | > 22 |
| Voltage(V) | 20 |
| Current(mA) | 560 |
| Package Type | Flange |
| Package(mm) | 15.2 x 15.2 x 5.2 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | 3A001.B.2.C |