1. Thermal resistance determined to the back of a 20 mil Cu-Mo carrier plate with eutectic die attach (85 C)
2. Refer to the following document GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates
Qorvo's TGA2623-CP is a packaged, high-power X-Band amplifier fabricated on Qorvo's TQGaN25 0.25 um GaN on SiC production process. Operating from 10 to 11 GHz, the TGA2623-CP achieves 32 W saturated output power, a power-added efficiency of greater than 41 %, and power gain of 27 dB.
The TGA2623-CP is packaged in a 10-lead 15x15 mm bolt-down package with a Cu base for superior thermal management. It can support a range of bias voltages and performs well under both pulsed and CW conditions. Both RF ports are internally DC blocked and matched to 50 ohms allowing for simple system integration.
The TGA2623-CP is ideally suited for both commercial and defense applications.
Lead free and RoHS compliant.
Evaluation Boards are available upon request.
|Package(mm)||15.2 x 15.2 x 3.5|
This product appears in the following application block diagrams: